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DMN2004DMK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
* * * * * * * * * * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2KV "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
* * * * * * * * Case: SOT-26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.015 grams (approximate)
NEW PRODUCT
SOT-26
D2
G1
S1
ESD protected up 2kV
S2
G2
D1
TOP VIEW
TOP VIEW Internal Schematic
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 3)
@TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS TA = 25C TA = 85C ID IDM Value 20 8 540 390 1.5 Units V V mA A
Steady State
Thermal Characteristics
@TA = 25C unless otherwise specified Symbol Pd RJA Tj, TSTG Value 225 556 -65 to +150 Units mW C/W C
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes: 1. 2. 3. 4. 5.
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min 20 0.5 200 0.5 Typ 0.4 0.5 0.7 Max 1 1 1.0 0.55 0.70 0.9 1.4 150 25 20 Unit V A A V ms V pF pF pF Test Condition VGS = 0V, ID = 10A VDS = 16V, VGS = 0V VGS = 4.5V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VDS = 16V, VGS = 0V f = 1.0MHz
Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect.
DMN2004DMK
Document number: DS30937 Rev. 3 - 2
1 of 4 www.diodes.com
November 2007
(c) Diodes Incorporated
DMN2004DMK
NEW PRODUCT
ID, DRAIN CURRENT (A) 0 0 1 2 3 4 5
VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
1
0.1
Tch, CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature
ID , DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
6 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
DMN2004DMK
Document number: DS30937 Rev. 3 - 2
2 of 4 www.diodes.com
November 2007
(c) Diodes Incorporated
DMN2004DMK
NEW PRODUCT
ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage
Tj, JUNCTION TEMPERATURE (C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
1000 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current
IDR, REVERSE DRAIN CURRENT (A)
VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation
DMN2004DMK
Document number: DS30937 Rev. 3 - 2
3 of 4 www.diodes.com
November 2007
(c) Diodes Incorporated
DMN2004DMK Ordering Information
Part Number DMN2004DMK-7
Notes:
(Note 6) Case SOT-26 Packaging 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information NEW PRODUCT
D2 G1 S1
NAB YM
S2 G2 D1
NAB = Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
Date Code Key Year Code Month Code
2006 T Jan 1 Feb 2
2007 U Mar 3 Apr 4
2008 V May 5 Jun 6
2009 W Jul 7
2010 X Aug 8 Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
Package Outline Dimensions
A
TOP VIEW
BC
H K M
J
D
F
L
SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 F 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0 8 All Dimensions in mm
Suggested Pad Layout
E E
Z
G
C
Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C 2.40 E 0.95
Y X
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DMN2004DMK
Document number: DS30937 Rev. 3 - 2
4 of 4 www.diodes.com
November 2007
(c) Diodes Incorporated

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